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| FLM1414-12F X, Ku-Band Internally Matched FET FEATURES * * * * * * High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 5.0dB (Typ.) High PAE: add = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed DESCRIPTION The FLM1414-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 57.6 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 34.0 and -5.0 mA respectively with gate resistance of 50. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Thermal Resistance Channel Temperature Rise CASE STYLE: IB Symbol IDSS gm Vp VGSO P1dB G1dB Idsr add Rth Tch Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 3600mA VDS = 5V, IDS = 300mA IGS = -340A VDS =10V, IDS = 0.6 IDSS (Typ.), f = 14.0 ~ 14.5 GHz, ZS = ZL= 50 ohm Channel to Case 10V x Idsr x Rth Min. -0.5 -5 39.5 4.0 Limit Typ. Max. 6000 5000 -1.5 40.5 5.0 3600 23 2.3 9000 -3.0 4500 2.6 80 Unit mA mS V V dBm dB mA % C/W C G.C.P.: Gain Compression Point Edition 1.3 August 2004 1 FLM1414-12F X, Ku-Band Internally Matched FET POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Total Power Dissipation (W) 60 45 30 Drain Current (mA) 6000 VGS = 0V -0.5V 4000 -1.0V 2000 -1.5V -2.0V 15 0 50 100 150 200 0 2 4 6 8 10 Case Temperature (C) Drain-Source Voltage OUTPUT POWER vs. FREQUENCY OUTPUT POWER vs. INPUT POWER VDS=10V f = 14.25 GHz VDS=10V P1dB 40 Pin=37dBm 40 Pout Output Power (dBm) Output Power (dBm) 33dBm 38 38 36 29dBm 36 30 34 add 20 34 32 25dBm 32 10 14.0 14.1 14.2 14.3 14.4 14.5 25 27 29 31 33 35 37 Frequency (GHz) Input Power (dBm) 2 add (%) FLM1414-12F X, Ku-Band Internally Matched FET +j50 +j100 +j25 13.9 14.0 13.8 GHz 14.1 14.2 14.3 14.4 14.5 14.6 14.7 100 0.1 +j250 14.7 14.6 250 14.7 +j10 SCALE FOR |S12| S11 S22 +90 0.2 S21 S12 0 10 25 14.0 13.8 GHz 50 14.4 14.2 14.5 180 1 14.5 14.4 14.3 14.2 2 3 4 5 14.5 14.4 14.3 0 SCALE FOR |S21| 14.0 13.8 GHz 13.8 GHz 14.7 -j10 -j250 14.2 14.1 14.0 13.9 -j25 -j50 -j100 -90 FREQUENCY (MHZ) 13800 13900 14000 14100 14200 14300 14400 14500 14600 14700 S11 MAG .376 .315 .248 .178 .104 .051 .091 .167 .247 .328 ANG -154.2 -159.6 -164.1 -165.7 -158.7 -115.7 -58.4 -46.4 -48.1 -52.7 S-PARAMETERS VDS = 10V, IDS = 3600mA S21 S12 MAG ANG MAG ANG 1.886 1.917 1.944 1.941 1.942 1.928 1.896 1.894 1.893 1.886 -80.3 -93.5 -105.8 -118.3 -131.7 -143.3 -156.3 -167.5 179.5 166.4 .106 .110 .113 .115 .114 .114 .113 .113 .115 .116 -87.7 -101.2 -114.7 -128.1 -141.4 -153.8 -165.0 -176.2 172.8 160.3 S22 MAG .653 .620 .585 .541 .506 .472 .437 .411 .381 .338 ANG 124.8 110.8 96.6 82.5 68.3 57.2 47.1 38.1 28.6 18.6 3 FLM1414-12F X, Ku-Band Internally Matched FET Case Style "IB" Metal-Ceramic Hermetic Package 2.0 Min. (0.079) 2-R 1.60.15 (0.063) 1 2 0.1 (0.004) 3 0.6 (0.024) 2.0 Min. (0.079) 2.60.15 (0.102) 5.2 Max. (0.205) 10.7 (0.421) 0.2 Max. (0.008) 1.45 (0.059) 12.90.2 (0.508) 12.0 (0.422) 17.00.15 (0.669) 21.00.15 (0.827) 1. Gate 2. Source (Flange) 3. Drain Unit: mm(inches) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4 |
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